GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY

被引：46

作者：

BEAN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：741 / 743

页数：3

共 16 条

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[4]

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[7] PHOTOMAGNETOELECTRIC EFFECT IN HETEROEPITAXIAL SILICON FILMS [J].

ECKE, W .

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[8]

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[9] PROPERTIES OF EPITAXIAL SILICON FILMS ON SPINEL BEFORE AND AFTER OXIDATION [J].

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[10] EPITAXIAL SILICON FILMS ON SPINEL BY EVAPORATION IN ULTRAHIGH VACUUM [J].

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