HYDROGEN RELATED EFFECTS IN A-SI-H STUDIED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：9

作者：

SERRA, J

ANDREU, J

SARDIN, G

ROCH, C

ASENSI, JM

BERTOMEU, J

ESTEVE, J

机构：

[1] Department of Applied Physics and Electronics, University of Barcelona, E-08028 Barcelona

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90136-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of thermal annealing of a-Si:H samples between 300 and 600-degrees-C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550-degrees-C. The hydrogen content measured by thermal desorption spectroscopy evolves in the same temperature range, whereas the evolution of the hydrogen content deduced from the IR transmission spectra differs, decreasing sooner and vanishing already at about 450-degrees-C.

引用

页码：269 / 272

页数：4

共 8 条

[1]

AMER N, 1984, SEMICONDUCTORS SEM B, V21

[2] COMPARATIVE-STUDY OF HYDROGEN EVOLUTION FROM AMORPHOUS HYDROGENATED SILICON FILMS [J].