ELECTRICAL-PROPERTIES OF SI IMPLANTED WITH AS THROUGH SIO2-FILMS

被引：11
作者：
HIRAO, T
FUSE, G
INOUE, K
TAKAYANAGI, S
YAEGASHI, Y
ICHIKAWA, S
IZUMI, T
机构：
[1] MATSUSHITA ELECT CORP,NAGAOKA,KYOTO,JAPAN
[2] TOKAI UNIV,FAC ENGN,DEPT ELECTR,TOKYO,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.327418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：262 / 268
页数：7
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