BARRIER HEIGHT VARIATION IN AL/GAAS SCHOTTKY DIODES WITH A THIN SILICON INTERFACIAL LAYER

被引：53

作者：

COSTA, JC ^{[1
]}

WILLIAMSON, F ^{[1
]}

MILLER, TJ ^{[1
]}

BEYZAVI, K ^{[1
]}

NATHAN, MI ^{[1
]}

MUI, DSL ^{[1
]}

STRITE, S ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al/n-GaAs and Al/Si/n-GaAs structures with thin silicon interfacial layers were grown in situ by molecular beam epitaxy and their electrical characteristics were measured. Effective barrier heights between 0.30 and 1.04 eV were determined through I-V and C-V measurements in the Al/Si/n-GaAs structures under varying conditions of deposition of the silicon layer, in contrast to a barrier height of 0.78 eV without the silicon layer. The conduction-band offset between Si and GaAs is estimated to be of the order of 0.3 +/- 0.05 eV. The results indicate that the Fermi level at the interface of GaAs on Si in the Al/Si/n-GaAs structure is unpinned from its midgap value.

引用

页码：382 / 384

页数：3

共 12 条

[1] ANTIPHASE-DOMAIN-FREE GAAS GROWN ON PSEUDOMORPHIC SI (100) SURFACES BY MOLECULAR-BEAM EPITAXY [J].