MECHANISM FOR THE EFFECT OF DOPING ON DISLOCATION MOBILITY

被引:106
作者
HIRSCH, PB
机构
来源
JOURNAL DE PHYSIQUE | 1979年 / 40卷
关键词
D O I
10.1051/jphyscol:1979624
中图分类号
学科分类号
摘要
引用
收藏
页码:117 / 121
页数:5
相关论文
共 16 条
[1]  
ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28
[2]  
EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116
[3]   CHEMICAL INFLUENCE OF HOLES AND ELECTRONS ON DISLOCATION VELOCITY IN SEMICONDUCTORS [J].
FRISCH, HL ;
PATEL, JR .
PHYSICAL REVIEW LETTERS, 1967, 18 (19) :784-&
[4]   KINK FORMATION IN CHARGED DISLOCATION [J].
HAASEN, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01) :145-155
[5]   RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J].
HIRSCH, PB .
JOURNAL DE PHYSIQUE, 1979, 40 :27-32
[6]  
Hirth J.P., 1982, THEORY DISLOCATIONS
[7]   THEORETICAL CALCULATIONS OF ELECTRON-STATES ASSOCIATED WITH DISLOCATIONS [J].
JONES, R .
JOURNAL DE PHYSIQUE, 1979, 40 :33-38
[8]  
LABUSCH R, 1975, I PHYS C SER, V23, P56
[9]  
MARKLUND S, 1979, J PHYS-PARIS, V40
[10]   CHARGED IMPURITY EFFECTS ON DEFORMATION OF DISLOCATION-FREE GERMANIUM [J].
PATEL, JR ;
CHAUDHURI, AR .
PHYSICAL REVIEW, 1966, 143 (02) :601-+