EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON

被引:27
作者
DOBSON, PS
机构
来源
PHILOSOPHICAL MAGAZINE | 1971年 / 24卷 / 189期
关键词
D O I
10.1080/14786437108217030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:567 / &
相关论文
共 15 条
[1]  
ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163
[2]  
CARSLAW HS, 1967, CONDUCTION HEAT SOLI, P388
[3]   BULK DIFFUSION OF PHOSPHORUS IN SILICON IN HYDROGEN ATMOSPHERE [J].
GHOSHTAG.RN .
APPLIED PHYSICS LETTERS, 1970, 17 (04) :137-&
[4]  
HALES R, IN PRESS
[5]   MATTER TRANSPORT IN SOLIDS [J].
HOWARD, RE ;
LIDIARD, AB .
REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :161-240
[6]   ANNEALING OF VACANCIES IN DILUTE ALLOYS [J].
HOWARD, RE ;
LIDIARD, AB .
PHILOSOPHICAL MAGAZINE, 1965, 11 (114) :1179-&
[7]  
HOWARD RE, 1963, J PHYS SOC JAPAN S, V18, P197
[8]  
LACHAPPELLE TJ, 1957, AF18603117 CONTR
[9]  
LIDIARD AB, 1955, PHILOS MAG, V46, P1218
[10]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&