A 3-GHZ TRANSIMPEDANCE OEIC RECEIVER FOR 1.3-1.55 MU-M FIBEROPTIC SYSTEMS

被引：28

作者：

CHANG, GK

HONG, WP

GIMLETT, JL

BHAT, R

NGUYEN, CK

SASAKI, G

YOUNG, JC

机构：

[1] Bellcore, Red Bank

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 03期

关键词：

D O I：

10.1109/68.50888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance, MSM-HEMT transimpedance photoreceiver has been fabricated using OMCVD grown InAlAs/InGaAs heterostructures on an InP substrate. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based OEIC photoreceivers. The transimpedance amplifier has an open loop gain of 5.7 and a bandwidth of 3.0 GHz which represent the highest gain and the highest speed performance reported for 1.3-1.55 (μm wavelength OEIC receivers. © 1990 IEEE

引用

页码：197 / 199

页数：3

共 5 条

[1]

CHANG GK, 1989, ELECTRON LETT, V25, P1021, DOI 10.1049/el:19890683

[2]

CROW JD, 1989, FEB P OFC 89 HOUST, P83

[3] MOCVD-GROWN ALLNAS/GALNAS MODFET WITH DRAIN CURRENTS HIGHER THAN 1.3A/MM [J].