IMPROVED TRANSCONDUCTANCE UNDER HIGH NORMAL FIELD IN MOSFETS WITH ULTRATHIN NITRIDED OXIDES

被引：42

作者：

HORI, T

IWASAKI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：195 / 197

页数：3

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