IMPROVED TRANSCONDUCTANCE UNDER HIGH NORMAL FIELD IN MOSFETS WITH ULTRATHIN NITRIDED OXIDES

被引：42
作者：
HORI, T
IWASAKI, H
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期
关键词：
D O I：
10.1109/55.31718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：195 / 197
页数：3
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