NITROGEN PROFILE MODIFICATION IN HIGH-DOSE IMPLANTATION SYNTHESIS OF SILICON-NITRIDE

被引：6

作者：

SOBESLAVSKY, E

JAGER, HU

KREISSIG, U

SKORUPA, W

WOLLSCHLAGER, K

机构：

[1] Akad der Wissenschaften der DRR, Dresden, East Ger, Akad der Wissenschaften der DRR, Dresden, East Ger

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 105卷 / 02期

关键词：

INTEGRATED CIRCUITS - Materials - MATHEMATICAL MODELS - MATHEMATICAL TECHNIQUES - Finite Difference Method - SILICON NITRIDE - SPECTROSCOPIC ANALYSIS;

D O I：

10.1002/pssa.2211050209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model for the formation of buried nitride in the process of high dose nitrogen implantation into silicon is presented. The model takes into account the target volume swelling as well as the change in ion range profiles due to the formation of Si//3N//4. In target depths where the nitrogen to silicon ratio exceeds that for silicon nitride, any unbounded nitrogen atom is given a specific volume.

引用

页码：387 / 396

页数：10

共 21 条

[1]

Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145

[2]

BURENKOV AF, 1980, TABLITSY PARAMETROV

[3] MICROSTRUCTURAL CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR [J].