REACTIVE ION-ETCHING-INDUCED DAMAGE IN SILICON USING SF6 GAS-MIXTURES

被引：5

作者：

ARORA, BM

PINTO, R

BABU, RS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：876 / 882

页数：7

共 23 条

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