ANOMALOUS CO-DIFFUSION EFFECTS OF GERMANIUM ON GROUP-III AND GROUP-V DOPANTS IN SILICON

被引：20
作者：
PFIESTER, JR
GRIFFIN, PB
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.99447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：471 / 473
页数：3
相关论文
共 11 条
[1]   INVESTIGATIONS BY SIMS OF THE BULK IMPURITY DIFFUSION OF GE IN SI [J].
DORNER, P ;
GUST, W ;
PREDEL, B ;
ROLL, U ;
LODDING, A ;
ODELIUS, H .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (04) :557-571
[2]   SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].
FAHEY, P ;
DUTTON, RW ;
HU, SM .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :777-779
[3]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[4]  
HARRIS RM, 1982, APPL PHYS LETT, V40, P616
[5]  
HETTICH G, 1979, I PHYS C SER, V46, P500
[6]   NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J].
HOLLAND, OW ;
WHITE, CW ;
FATHY, D .
APPLIED PHYSICS LETTERS, 1987, 51 (07) :520-522
[7]   ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON [J].
HU, SM ;
FAHEY, P ;
DUTTON, RW .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6912-6922
[8]  
LAW MM, UNPUB
[9]  
MCVAY GL, 1973, J APPL PHYS, V43, P1409
[10]   EFFECTS OF PHOSPHORUS DIFFUSION ON GROWTH AND SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS [J].
NISHI, K ;
ANTONIADIS, DA .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3428-3438
12