ELECTRON TRAP CENTER GENERATION DUE TO HOLE TRAPPING IN SIO2 UNDER FOWLER-NORDHEIM TUNNELING STRESS

被引：50

|

作者：

UCHIDA, H

AJIOKA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 06期

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D O I：

10.1063/1.98413

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：433 / 435

页数：3

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