CHARACTERISTICS OF DELTA-DOPED INGAAS/GAAS PSEUDOMORPHIC DOUBLE-QUANTUM-WELL HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：2

作者：

HSU, RT

KAO, MJ

WANG, JS

HSU, WC

机构：

[1] Natl Cheng Kung Univ, Tainan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

δ-doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors grown by low pressure metalorganic chemical vapor deposition are fabricated and demonstrated. The heterostructure with 2 μm gate length and 100 angstrom channel spacer thickness shows a peak extrinsic transconductance and a maximum saturation current density of 121 mS/mm and 423 mA/mm at 300 K, respectively. Meanwhile, an interesting broad twin-peak transconductance plateau (approx.4 V) is observed.

引用

收藏

页码：273 / 275

页数：3

相关论文

共 10 条

[1] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R ;

MORKOC, H ;

THORNE, RE ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240

[2] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].

FISCHER, R ;

DRUMMOND, TJ ;

KLEM, J ;

KOPP, W ;

HENDERSON, TS ;

PERRACHIONE, D ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1028-1032

[3] VARIATION OF THE MOBILITY AND THE 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION WITH INDIUM COMPOSITION IN DELTA-DOPED GAAS/INXGA1-XAS/GAAS PSEUDOMORPHIC STRUCTURES [J].

HSU, WC ;

CHEN, CM ;

LIN, W .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) :4332-4335

[4]

LIN W, 1991, JPN J APPL PHYS, V30, P1158

[5] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

ROSENBERG, JJ ;

BENLAMRI, M ;

KIRCHNER, PD ;

WOODALL, JM ;

PETTIT, GD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

[6] MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS [J].

SHENG, NH ;

LEE, CP ;

CHEN, RT ;

MILLER, DL ;

LEE, SJ .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :307-310

[7] INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS/INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES [J].

SHIEH, HM ;

HSU, WC ;

KAO, MJ ;

WU, CL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01) :154-157

[8] CHARACTERIZATION OF GAAS AND INGAAS DOUBLE-QUANTUM-WELL HETEROSTRUCTURE FETS [J].

THERON, D ;

BONTE, B ;

GAQUIERE, C ;

PLAYEZ, E ;

CROSNIER, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) :1935-1941

[9] A HIGH-CURRENT PSEUDOMORPHIC ALGAAS/INGAAS DOUBLE QUANTUM-WELL MODFET [J].

WANG, GW ;

CHEN, YK ;

RADULESCU, DC ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :4-6

[10] ELECTRON-MOBILITY ENHANCEMENT FROM COUPLED WELLS IN DELTA-DOPED GAAS [J].

ZHENG, X ;

CARNS, TK ;

WANG, KL ;

WU, B .

APPLIED PHYSICS LETTERS, 1993, 62 (05) :504-506