SEPARATION OF BOUND AND FREE CARRIER CONTRIBUTIONS TO THE REFRACTIVE-INDEX CHANGE INDUCED IN II-VI SEMICONDUCTORS BY FEMTOSECOND PULSES

被引：2
|
作者：
FOX, EC [1 ]
CANTOSAID, EJ [1 ]
VANDRIEL, HM [1 ]
机构：
[1] ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO M5S 1A7,ONTARIO,CANADA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期
关键词：
D O I：
10.1088/0268-1242/7/3B/045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-resolved probe beam deflection and degenerate four-wave mixing (DFWM) have both been used to determine the temporal evolution of the refractive index changes induced in ZnSe and CdS0.75Se0.25 single crystals at T = 300 K by lambda = 620 nm, 120 fs pulses with irradiances (I) up to 500 GW cm-2. Negative refractive index changes which follow the pump pulse profile are attributed to virtual electronic transitions and two-photon resonances, while two-photon-generated hot carriers and their cooling rate determine the magnitude and temporal evolution of the refractive index change for probe delays up to 4 ps. No further evolution is observed up to 100 ps unless I > 30 GW cm-2, in which case the refractive index appears to recover on a 10 ps timescale following carrier relaxation; the possible role of a threshold dependent recombination process in this recovery is discussed.
引用
收藏
页码：B183 / B186
页数：4
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