METHOD FOR REDUCING THE HOLE AND ELECTRON TRAPPING DENSITIES IN THERMAL SIO2-FILMS

被引：6

|

作者：

IWAMATSU, S

TARUI, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期

关键词：

D O I：

10.1149/1.2129177

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1078 / 1080

页数：3

相关论文

共 50 条

[41] ELECTRON TRAPPING KINETICS IN SIO2 FILMS
DIMARIA, DJ
FEIGL, FJ
BUTLER, SR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 584 - 584
[42] TRAP IONIZATION BY ELECTRON-IMPACT IN AMORPHOUS SIO2-FILMS
DIMARIA, DJ
FEIGL, FJ
BUTLER, SR
APPLIED PHYSICS LETTERS, 1974, 24 (10) : 459 - 461
[43] CHARGE PHENOMENA IN THERMAL SIO2-FILMS WITH AVALANCHE INJECTION OF ELECTRONS
EMELYANOV, AM
DVORNIKOV, BD
KUNIN, BY
SOVIET MICROELECTRONICS, 1985, 14 (06): : 273 - 276
[44] INJECTION AND TRAPPING CHARACTERISTICS OF ELECTRICAL CHARGE IN OFF-STOICHIOMETRIC SIO2-FILMS
LOPEZ, M
FALCONY, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C131 - C131
[45] RHEED INVESTIGATIONS ON LOW-TEMPERATURE THERMAL SIO2-FILMS
POPOVA, LI
PENEVA, SK
TCUKEVA, EA
ATANASSOVA, ED
CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (04) : 425 - 432
[46] ANOMALOUS AMORPHOUS SIO2-FILMS
HAUSER, JJ
PASTEUR, GA
STAUDINGER, A
HUTTON, RS
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) : 59 - 70
[47] CHARGE TRAPPING AND INTERFACE STATE GENERATION BY AVALANCHE HOT-ELECTRON INJECTION IN RAPID THERMAL NH3 ANNEALED AND REOXIDIZED SIO2-FILMS
LIU, ZH
CHEN, PS
CHENG, YC
LAI, PT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1871 - 1876
[48] CHANNEL DEFECTS IN SIO2-FILMS
REVESZ, AG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C377 - C377
[49] GROWTH OF ANODIC SIO2-FILMS
PANAGOPOULOS, C
BADEKAS, H
MATERIALS LETTERS, 1989, 8 (6-7) : 212 - 215
[50] COBALT DIFFUSION IN SIO2-FILMS
FEDOROVICH, NA
FIZIKA TVERDOGO TELA, 1980, 22 (06): : 1875 - 1877

← 1 2 3 4 5 →