METHOD FOR REDUCING THE HOLE AND ELECTRON TRAPPING DENSITIES IN THERMAL SIO2-FILMS

被引：6
|
作者：
IWAMATSU, S
TARUI, Y
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期
关键词：
D O I：
10.1149/1.2129177
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1078 / 1080
页数：3
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