METHOD FOR REDUCING THE HOLE AND ELECTRON TRAPPING DENSITIES IN THERMAL SIO2-FILMS

被引：6

|

作者：

IWAMATSU, S

TARUI, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期

关键词：

D O I：

10.1149/1.2129177

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1078 / 1080

页数：3

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