DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：12
作者：
WINER, K
机构：
[1] NTT Basic Research Laboratories
来源：
ANNUAL REVIEW OF MATERIALS SCIENCE | 1991年 / 21卷
关键词：
DEFECT STRUCTURE; LOCALIZED STATES; A-SI-H GROWTH; CHEMICAL EQUILIBRIA; DEFECT FORMATION;
D O I：
10.1146/annurev.ms.21.080191.000245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1 / 21
页数：21
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