CALCULATION OF NATIVE DEFECT CONCENTRATIONS IN GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：1

作者：

ICHIMURA, M

WADA, T

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, 466, Gokiso

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90790-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Native defect concentrations in GaAs grown by organometallic vapor-phase epitaxy (OMVPE) are calculated. The most dominant defect is the Ga antisite (Ga(As)) or the As antisite (As(Ga)). The input Ga pressure is assumed to be 5 x 10(-5) atm. At 600-degrees-C, the As(Ga) concentration is larger than that of Ga(As) when the V/III ratio of the input gas pressures is larger than 1.6. For a fixed V/III ratio, Ga(As) becomes more dominant as the temperature is increased. The calculated defect concentrations are comparable to the residual donor and acceptor concentrations in OMVPE GaAs, and thus the electrical properties of OMVPE GaAs could be influenced by the native defects.

引用

收藏

页码：479 / 483

页数：5

相关论文

共 20 条

[1] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].

BHATTACHARYA, PK ;

KU, JW ;

OWEN, SJT ;

AEBI, V ;

COOPER, CB ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306

[2] NATIVE DEFECTS AND STOICHIOMETRY IN GAALAS [J].

BLOM, GM .

JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) :125-137

[3] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[4] ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE ALXGA1-XAS GROWN BY MO-VPE [J].

HALLAIS, J ;

ANDRE, JP ;

MIRCEAROUSSEL, A ;

MAHIEU, M ;

VARON, J ;

BOISSY, MC ;

VINK, AT .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (04) :665-682

[5] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :613-626

[6] NATIVE DEFECTS IN III-V-TERNARY ALLOY SEMICONDUCTORS GROWN FROM LIQUID-SOLUTIONS [J].

ICHIMURA, M ;

WADA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08) :1515-1520

[7] NATIVE DEFECTS IN THE ALXGA1-XSB ALLOY SEMICONDUCTOR [J].

ICHIMURA, M ;

HIGUCHI, K ;

HATTORI, Y ;

WADA, T ;

KITAMURA, N .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6153-6158

[8] THERMODYNAMIC CALCULATION OF NATIVE DEFECT CONCENTRATIONS IN III-V ALLOY SEMICONDUCTORS GROWN BY HALIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

ICHIMURA, M ;

WADA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) :2097-2102

[9] POINT-DEFECT CONCENTRATIONS IN INGAASP QUATERNARY ALLOYS [J].

ICHIMURA, M ;

WADA, T .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :4140-4142

[10] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J].

JORDAN, AS ;

VONNEIDA, AR ;

CARUSO, R ;

KIM, CK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :153-158