ANNEALING EFFECT ON LATTICE DISTORTION IN ANODIZED POROUS SILICON LAYERS

被引：38

作者：

SUGIYAMA, H

NITTONO, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L2013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2013 / L2016

页数：4

共 9 条

[1] DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].

BARLA, K ;

HERINO, R ;

BOMCHIL, G ;

PFISTER, JC ;

FREUND, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732

[2] X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

PFISTER, JC ;

BARUCHEL, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726

[3] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].

BEALE, MIJ ;

CHEW, NG ;

UREN, MJ ;

CULLIS, AG ;

BENJAMIN, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88

[4]

Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[5]

ITO I, 1988, STRUCTURE SURFACES, V2, P378

[6] INITIAL OXIDATION PROCESS OF ANODIZED POROUS SILICON WITH HYDROGEN-ATOMS CHEMISORBED ON THE INNER SURFACE [J].

KATO, Y ;

ITO, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1406-L1409

[7] HIGH-TEMPERATURE TREATMENT OF POROUS SILICON [J].

LABUNOV, VA ;

BONDARENKO, VP ;

BORISENKO, VE ;

DOROFEEV, AM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01) :193-198

[8] CHARACTERIZATION OF POROUS SILICON LAYERS BY MEANS OF X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY [J].

SUGIYAMA, H ;

NITTONO, O .

ISIJ INTERNATIONAL, 1989, 29 (03) :223-228

[9] X-RAY DOUBLE CRYSTAL DIFFRACTION STUDY OF POROUS SILICON [J].

YOUNG, IM ;

BEALE, MIJ ;

BENJAMIN, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1133-1135

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