1/F NOISE IN THE LINEAR REGION OF LDD MOSFETS

[1] LIGHTLY DOPED DRAIN TRANSISTORS FOR ADVANCED VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 896 - 902

[2] Burstein E., 1957, SEMICONDUCTOR SURFAC

[3] STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2797 - 2802

[4] CHATTERJEE PK, 1979, IEDM

[5] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J]. PHYSICA, 1972, 60 (01): : 130 - +

[6] EXPERIMENTAL STUDIES ON 1-F NOISE [J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532

[7] LAI FJ, 1985, IEEE T ELECTRON DEVI, V32

[8] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 268 - 275

[10] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[1] LIGHTLY DOPED DRAIN TRANSISTORS FOR ADVANCED VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 896 - 902

[2] Burstein E., 1957, SEMICONDUCTOR SURFAC

[3] STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2797 - 2802

[4] CHATTERJEE PK, 1979, IEDM

[5] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J]. PHYSICA, 1972, 60 (01): : 130 - +

[6] EXPERIMENTAL STUDIES ON 1-F NOISE [J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532

[7] LAI FJ, 1985, IEEE T ELECTRON DEVI, V32

[8] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 268 - 275

[10] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367