1/F NOISE IN THE LINEAR REGION OF LDD MOSFETS

被引：15
作者：
TSAI, CYH
GONG, J
机构：
[1] Natl Tsing Hua Univ, Hsinchu, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
17
引用
收藏
页码：2373 / 2377
页数：5
相关论文
共 17 条
[1]   LIGHTLY DOPED DRAIN TRANSISTORS FOR ADVANCED VLSI CIRCUITS [J].
BAGLEE, DA ;
DUVVURY, C ;
SMAYLING, MC ;
DUANE, MP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :896-902
[2]  
Burstein E., 1957, SEMICONDUCTOR SURFAC
[3]   STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J].
CELIK, Z ;
HSIANG, TY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2797-2802
[4]  
CHATTERJEE PK, 1979, IEDM
[5]   DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J].
HOOGE, FN .
PHYSICA, 1972, 60 (01) :130-+
[6]   EXPERIMENTAL STUDIES ON 1-F NOISE [J].
HOOGE, FN ;
KLEINPENNING, TGM ;
VANDAMME, LKJ .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532
[7]  
LAI FJ, 1985, IEEE T ELECTRON DEVI, V32
[8]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[9]   1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].
NING, TH ;
COOK, PW ;
DENNARD, RH ;
OSBURN, CM ;
SCHUSTER, SE ;
YU, HN .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :268-275
[10]   DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].
OGURA, S ;
TSANG, PJ ;
WALKER, WW ;
CRITCHLOW, DL ;
SHEPARD, JF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367
12