TEMPERATURE DEPENDENCE OF ULTRASONIC AMPLIFICATION IN CDS

Temperature dependence of ultrasonic amplification in CdS crystals is fully investigated over a temperature range from 80 to At room temperature, the attenuation-amplification characteristics observed in a sulfurtreated CdS crystal agree well with theory, in which no trapping is assumed. But at the lower temperatures, the characteristics are observed to deviate considerably from theory. That is, the curves of the gain versus drift field become asymmetric with reference to the crossover drift field in the temperature range between 130 and and the effective drift mobility steeply decreases at these temperatures. In order to discuss the temperature characteristics observed in ultrasonic amplification, a theory is developed related to the temperature dependence of electron trapping. It is found that the observed characteristics are well explained by a theory in which two different electron-trapping levels are introduced. © 1969 IEEE. All rights reserved.