SEEDED LATERAL EPITAXY IN SILICON-ON-INSULATOR STRUCTURES

被引：1

作者：

WARABISAKO, T

TOKUYAMA, T

TAMURA, M

MIYAO, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1393 / 1394

页数：2

共 25 条

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