HYDROGEN ADSORPTION ON ERSI1.7(0001)

被引：6
作者：
VEUILLEN, JY
TAN, TA
LADAS, S
KENNOU, S
机构：
[1] UNIV GRENOBLE 1,CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE
[2] UNIV PATRAS,DEPT CHEM ENGN,GR-26500 PATRAI,GREECE
[3] FDN RES & TECHNOL HELLAS,INST CHEM ENGN & HIGH TEMP CHEM PROC,GR-26500 PATRAI,GREECE
[4] UNIV IOANNINA,DEPT PHYS,GR-45110 IOANNINA,GREECE
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.52.10796
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The adsorption of hydrogen atoms on ErSi1.7(0001) thin films, epitaxially grown on Si(111), has been studied in situ by low-energy electron-diffraction, photoemission, temperature programmed desorption (TPD), and work-function measurements. The results obtained with these techniques indicate that, at low hydrogen exposures, the adsorption sites on the silicide surface are very similar to those on Si(111), confirming the structural model of a silicide terminated by a buckled silicon plane without Si vacancies. At larger exposures, a second state is observed by TPD at higher desorption temperature. This state is not observed by TPD on Si(111) and is attributed to hydrogen chemisorbed in the subsurface region of the silicide.
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收藏
页码：10796 / 10799
页数：4
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