HYDRODYNAMICS OF A DENSE-PLASMA CREATED DURING LASER ANNEALING PULSES

被引：25

作者：

COMBESCOT, M

机构：

来源：

PHYSICS LETTERS A | 1981年 / 85卷 / 05期

关键词：

D O I：

10.1016/0375-9601(81)90968-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：308 / 312

页数：5

共 14 条

[1] LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT [J].

BENTINI, GG ;

COHEN, C ;

DESALVO, A ;

DRIGO, AV .

PHYSICAL REVIEW LETTERS, 1981, 46 (02) :156-159

[2] EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON [J].

BOK, J .

PHYSICS LETTERS A, 1981, 84 (08) :448-450

[3] HYDRODYNAMICS OF AN ELECTRON-HOLE PLASMA CREATED BY A PULSE [J].

COMBESCOT, M .

SOLID STATE COMMUNICATIONS, 1979, 30 (02) :81-86

[4] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J].

COMBESCOT, M ;

NOZIERES, P .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17) :2369-+

[5] ON LASER ANNEALING AND LATTICE MELTING [J].

DUMKE, WP .

PHYSICS LETTERS A, 1980, 78 (5-6) :477-480

[6] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1604-1607

[7]

MURAKAMI K, 1980, 15TH P INT C PHYS SE, P1303

[8] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J].

TSENG, WF ;

MAYER, JW ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :824-826

[9] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

[10] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW .

PHYSICS LETTERS A, 1979, 74 (06) :422-426

← 1 2 →