SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF LIGHT-EMITTING POROUS SILICON STRUCTURES

被引：38

作者：

PICKERING, C

CANHAM, LT

BRUMHEAD, D

机构：

[1] Defence Research Agency Malvern, Malvern, WR14 3PS, St. Andrews Road

来源：

APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90058-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large differences are observed in the [n] spectra of porous Si produced in n+, p+, p- substrates. Loss of c-Si structure is explained by a reduction in effective crystallite size due to quantum wire formation and does not require inclusion of an amorphous phase. Critical point energy shifts are attributed to confinement and stress effects. Spectroscopic ellipsometry is used to obtain porosity and detect porosity gradients.

引用

页码：22 / 26

页数：5

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