THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS

被引：53
作者：
SIMMONS, JG [1 ]
WEI, LS [1 ]
机构：
[1] UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期
关键词：
D O I：
10.1016/0038-1101(73)90125-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：53 / 66
页数：14
相关论文
共 25 条
[1]   SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS [J].
ARNOLD, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :1003-&
[2]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[3]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[4]   CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].
DEAL, BE ;
MACKENNA, EL ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&
[5]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[6]   LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING [J].
GOETZBERGER, A ;
IRVIN, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :1009-+
[7]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[8]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[9]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[10]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
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