EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON

被引：25

作者：

ALLEN, WG ^{[1
]}

机构：

[1] NEWCASTLE POLYTECH,DEPT PHYS & PHYS ELECTR,NEWCASTLE NE1 8ST,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 06期

关键词：

D O I：

10.1016/0038-1101(73)90114-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 717

页数：9

共 14 条

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].

ALLEN, WG ;

ANAND, KV .

SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&

[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J].

BEAN, KE ;

GLEIM, PS .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1469-&

[3] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].

BENNEMAN, KH .

PHYSICAL REVIEW, 1965, 137 (5A) :1497-+

[4] DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES [J].

CHAN, TC ;

MAI, CC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04) :588-&

[5]

HIGUCHI H, 1971, SPR M EL SOC, P190

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[7]

KATSUTA M, 1970, SHIN NIPPON DENKI GI, V5, P9

[8]

KATZ LE, 1970, S SILICON DEVICE PRO

[9]

KOVALEV RA, 1970, FIZ TVERD TELA+, V11, P1571

[10] ORIENTATION DEPENDENCE OF BORON DIFFUSION [J].

OKAMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) :848-&

← 1 2 →