SOME BAND-STRUCTURE RELATED OPTICAL AND PHOTOELECTRICAL PROPERTIES OF PB1-XEUXSE (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2)

被引:7
作者
HERRMANN, KH [1 ]
MOLLMANN, KP [1 ]
TOMM, JW [1 ]
BOTTNER, H [1 ]
LAMBRECHT, A [1 ]
TACKE, M [1 ]
机构
[1] FRAUNHOFER INST PHYS MESSTECH,W-7800 FREIBURG,GERMANY
关键词
D O I
10.1063/1.351752
中图分类号
O59 [应用物理学];
学科分类号
摘要
The results of an experimental study of photoelectrical and optical properties of molecular beam epitaxy grown Pb1-xEuxSe are presented. The data obtained are discussed with respect to band structure of the mixed crystal obtained by a linear interpolation between the relevant energy states in the binaries PbSe and EuSe.
引用
收藏
页码:1399 / 1404
页数:6
相关论文
共 21 条
[1]   ELECTRON-PHONON INTERACTION IN EUSE FROM OPTICAL-ABSORPTION [J].
BATLOGG, B ;
WACHTER, P .
SOLID STATE COMMUNICATIONS, 1977, 24 (08) :569-572
[2]   SPIN-POLARIZED ENERGY BANDS IN EU CHALCOGENIDES BY AUGMENTED-PLANE-WAVE METHOD [J].
CHO, SJ .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4589-+
[3]   STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF PB1-XYBXTE FILMS (0 LESS-THAN X LESS-THAN 0.25) [J].
DAS, SK ;
SURYANARAYANAN, R .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) :4843-4845
[4]   OPTICAL BANDGAP AND MAGNETOOPTICAL EFFECTS IN (PB,EU)TE [J].
GOLTSOS, WC ;
NURMIKKO, AV ;
PARTIN, DL .
SOLID STATE COMMUNICATIONS, 1986, 59 (04) :183-186
[5]  
GUENTHERODT G, 1971, PHYS KONDENS MATER, V12, P292
[6]   BAND-EDGE OFFSETS IN PBSE-PBEUSE AND PBTE-PBEUTESE HETEROSTRUCTURES DEDUCED FROM ELECTRON-BEAM-INDUCED CURRENT [J].
HEINRICH, H ;
PANHUBER, C ;
EISENBEISS, A ;
PREIER, H ;
FEIT, Z .
SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) :175-179
[7]   ON THE BROADENING MECHANISMS NEAR THE E0 TRANSITION IN NARROW-GAP (HG, CD)TE [J].
HERRMANN, KH ;
MOLLMANN, KP ;
TOMM, JW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (02) :635-640
[8]   PB1-XEUXS FILMS PREPARED BY HOT WALL EPITAXY [J].
ISHIDA, A ;
NAKAHARA, N ;
OKAMURA, T ;
SASE, Y ;
FUJIYASU, H .
APPLIED PHYSICS LETTERS, 1988, 53 (04) :274-275
[9]   MOLECULAR-BEAM EPITAXY OF PB1-XSRXSE FOR THE USE IN IR DEVICES [J].
LAMBRECHT, A ;
HERRES, N ;
SPANGER, B ;
KUHN, S ;
BOTTNER, H ;
TACKE, M ;
EVERS, J .
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :301-308
[10]   DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J].
LANGER, JM ;
HEINRICH, H .
PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1414-1417