INTERNAL RESONANCE RAMAN-SCATTERING OF CHARACTERISTIC TARGET K X-RAYS IN THICK SILICON TARGETS

A four-inch curved-crystal spectrometer has been used to investigate the internal resonance Raman scattering (IRRS) process in Si K x-ray spectra induced by 1.5- and 2.0-MeV proton bombardment of thick targets. The IRRS process involves the scattering of characteristic target K1,2 radiation off of the L shell of a neighboring target atom. The scattered photons exhibit an edge-shaped structure at 1/4 1640.5 eV which tails off at low energies. A thick-target analysis has been used to obtain a partial scattering cross section for scattering within the observable energy range 1634 1640.5 eV, which is in reasonable agreement with our calculations based on second-order perturbation theory. Based on the partial cross section, we are able to estimate the total IRRS cross section for scattering into all angles and all allowed energies (01640.5 eV) to be (5820)r02 or (4.61.6)10-24 cm2. © 1979 The American Physical Society.