ION-IMPLANTED JUNCTION FORMATION IN HG1-XCDXTE

被引：50

作者：

BUBULAC, LO

TENNANT, WE

LO, DS

EDWALL, DD

ROBINSON, JC

CHEN, JS

BOSTRUP, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574861

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3166 / 3170

页数：5

共 13 条

[1] DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE
BUBULAC, LO
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 976 - 978
[2] BORON AND INDIUM ION-IMPLANTED JUNCTIONS IN HGCDTE GROWN ON CDTE AND CDTE/AL2O3
BUBULAC, LO
LO, DS
TENNANT, WE
EDWALL, DD
ROBINSON, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2169 - 2173
[3] P ON N ION-IMPLANTED JUNCTIONS IN LIQUID-PHASE EPITAXY HGCDTE LAYERS ON CDTE SUBSTRATES
BUBULAC, LO
LO, DS
TENNANT, WE
EDWALL, DD
CHEN, JC
RATUSNIK, J
ROBINSON, JC
BOSTRUP, G
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1586 - 1588
[4] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
BUBULAC, LO
TENNANT, WE
RIEDEL, RA
MAGEE, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
[5] BUBULAC LO, IN PRESS APPL PHYS L
[6] INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE
DESTEFANIS, GL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 171 - 175
[7] ION-IMPLANTATION IN HG1-XCDXTE
DESTEFANIS, GL
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 567 - 580
[8] DESTEFANIS GL, 1986, 3RD INT C ADV IR DET
[9] FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING
KALISH, R
BAHIR, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 474 - 477
[10] STUDY OF IMPLANTATION IN HGCDTE BY ELECTROLYTE ELECTROREFLECTANCE
RACCAH, PM
GARLAND, JW
ZHANG, Z
YANG, D
BUBULAC, LO
TENNANT, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3180 - 3183

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