ION-IMPLANTED JUNCTION FORMATION IN HG1-XCDXTE

被引：50
作者：
BUBULAC, LO
TENNANT, WE
LO, DS
EDWALL, DD
ROBINSON, JC
CHEN, JS
BOSTRUP, G
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期
关键词：
D O I：
10.1116/1.574861
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：3166 / 3170
页数：5
相关论文
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