共 50 条
- [1] CURRENT-VOLTAGE CHARACTERISTICS OF P-UPSILON-N GAP STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 799 - 800
- [4] A CRITERION FOR THE OCCURRENCE OF NEGATIVE-RESISTANCE IN SI P-PI-N DIODE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02): : 408 - 409
- [6] Abnormal photocurrent-voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes Appl Phys Lett, 20 (2586-2588):
- [7] NUMERICAL-ANALYSIS OF BEHAVIOR OF P-PI-N DIODES AND PN-PI-N THYRISTORS IN DIRECT POLARIZATION COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1974, 278 (09): : 323 - 326
- [9] INFLUENCE OF THE SURFACE PRETREATMENT ON THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS AND THE SPECTRAL RESPONSE OF THE N-GAAS-ELECTROLYTE INTERFACE BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1979, 83 (03): : 236 - 241