SPECTRAL PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF A-SI P-UPSILON-N AND P-PI-N DIODES

被引:2
|
作者
KUSIAN, W [1 ]
PFLEIDERER, H [1 ]
BULLEMER, B [1 ]
机构
[1] UNIV MUNICH,FED ARMED FORCES,NEUBIBERG,FED REP GER
关键词
D O I
10.1016/0022-3093(87)90152-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:647 / 650
页数:4
相关论文
共 50 条
  • [1] CURRENT-VOLTAGE CHARACTERISTICS OF P-UPSILON-N GAP STRUCTURES
    POPOV, YG
    PUTILOVSKAYA, MY
    SLOBODCH.SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 799 - 800
  • [2] RECOMBINATION IN SILICON P-PI-N DIODES
    WILSON, PG
    SOLID-STATE ELECTRONICS, 1967, 10 (02) : 145 - &
  • [3] Abnormal photocurrent-voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes
    Kwon, OK
    Lee, KS
    Chu, HY
    Lee, EH
    Ahn, BT
    APPLIED PHYSICS LETTERS, 1998, 72 (20) : 2586 - 2588
  • [4] A CRITERION FOR THE OCCURRENCE OF NEGATIVE-RESISTANCE IN SI P-PI-N DIODE
    HORINOUCHI, Y
    AKIBA, Y
    CHOE, IY
    NODA, K
    KUROSU, T
    IIDA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02): : 408 - 409
  • [5] DUAL BEAM TIME-OF-FLIGHT EXPERIMENTS ON A-SI-H P-PI-N AND PVN DIODES
    KARG, F
    GUNZEL, E
    VONKLITZING, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1323 - 1326
  • [6] Abnormal photocurrent-voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes
    Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
    Appl Phys Lett, 20 (2586-2588):
  • [7] NUMERICAL-ANALYSIS OF BEHAVIOR OF P-PI-N DIODES AND PN-PI-N THYRISTORS IN DIRECT POLARIZATION
    ENEA, G
    ESTEVE, D
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1974, 278 (09): : 323 - 326
  • [8] ON THE CURRENT VOLTAGE CHARACTERISTICS OF N+-P-P+ DIODES
    CHUANG, CT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1709 - 1716
  • [9] INFLUENCE OF THE SURFACE PRETREATMENT ON THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS AND THE SPECTRAL RESPONSE OF THE N-GAAS-ELECTROLYTE INTERFACE
    VANMEIRHAEGHE, RL
    CARDON, F
    GOMES, WP
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1979, 83 (03): : 236 - 241
  • [10] THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF THE HETEROJUNCTION COMBINATION N-SI/SNO2/REDOX-ELECTROLYTE
    DECKER, F
    FRACASTORODECKER, M
    BADAWY, W
    DOBLHOFER, K
    GERISCHER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2173 - 2179