SELECTIVE LPCVD TUNGSTEN FOR CONTACT BARRIER APPLICATIONS

被引:36
作者
LEVY, RA
GREEN, ML
GALLAGHER, PK
ALI, YS
机构
关键词
D O I
10.1149/1.2109047
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1905 / 1912
页数:8
相关论文
共 20 条
[1]  
[Anonymous], PHYS SEMICONDUCTOR D
[2]  
BEINGLASS I, 1981, ELECTROCHEM SOC EXT, V812, P921
[3]  
BLEWER RS, 1984, ELECTROCHEMICAL SOC, V842, P601
[4]  
BLEWER RS, 1985, ELECTROCHEMICAL SOC, P116
[5]  
BOMAN M, 1984, ELECTROCHEMICAL SOC, P150
[6]  
GARGINI P, 1981, ELECTROCHEMICAL SOC, V812, P924
[7]  
Gargini P. A., 1981, International Electron Devices Meeting, P54
[8]  
GARGINI PA, 1983, RES DEV, V25, P141
[9]  
GARGINI PA, 1982, P INT RELIABILITY PH, P66
[10]   STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J].
GREEN, ML ;
LEVY, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1243-1250