SELF-ALIGNED HIGH-QUALITY TOTAL INTERNAL-REFLECTION MIRRORS

被引:6
作者
HAN, H
FORBES, DV
COLEMAN, JJ
机构
[1] Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana
基金
美国国家科学基金会;
关键词
D O I
10.1109/68.404008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-quality total internal reflection (TIR) mirrors are fabricated by a new self-aligned etch process,using SiCl, reactive ion etching (RIE), The self-aligned etch process requires only a single SiO2 mask layer without additional dielectric depositions and lift-off steps. The reflectivity of the TIR mirrors are measured by characterizing InGaAs-GaAs-AlGaAs strained-layer quantum-well heterostructure crank lasers that consist of crank-shaped ridge waveguides with two TIR mirrors and two cleaved facets, It is found that the self-aligned TIR mirrors have a very high reflectivity of 0.90 (0.46 dB/90 degrees loss).
引用
收藏
页码:899 / 901
页数:3
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