VARIABLE-RANGE-HOPPING TRANSPORT IN THE TAILS OF THE CONDUCTIVITY PEAKS BETWEEN QUANTUM HALL PLATEAUS

被引：35
|
作者：
KOCH, S [1 ]
HAUG, RJ [1 ]
VONKLITZING, K [1 ]
PLOOG, K [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 02期
关键词：
D O I：
10.1088/0268-1242/10/2/015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
引用
收藏
页码：209 / 212
页数：4
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