IMPURITY REDISTRIBUTION IN SIO2-SI DURING OXIDATION - NUMERICAL-SOLUTION INCLUDING INTERFACIAL FLUXES

A numerical solution of the moving boundary problem associated with silicon oxidation is discussed. An integral formulation of the continuity equation is used which includes the particle flux effects of the moving boundary and impurity segregation. A comparison between numerical results and an analytic solution shows that solution accuracy depends critically on a correct formulation of the flux terms. Calculated values of concentration and integrated doping for several values of diffusivity ratio, Dox/Dsi, and segregation coefficient, m, show that the interfacial flux must be properly included to achieve accurate numerical results over a wide range of physical parameters. © 1979, The Electrochemical Society, Inc. All rights reserved.