MODE GAIN AND JUNCTION CURRENT IN GAAS UNDER LASING CONDITIONS

被引：24

作者：

HAKKI, BW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：288 / 294

页数：7

共 18 条

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LOCKWOOD, HF .

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[9] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[10] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

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