STABILITY OF THE DIMER STRUCTURE FORMED ON SI(100) BY ULTRACLEAN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

被引：39

作者：

SAKURABA, M

MUROTA, J

ONO, S

机构：

[1] Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.356041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stability against air exposure of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition was investigated. A 2 X 1-reconstructed dimer structure was clearly observed on the epitaxial Si film on Si(100) by reflection high-energy electron diffraction even after air exposure for 180 min. The dissociation process of the dimer structure and the oxidation process in the air depended on the cooling atmosphere in the reactor after chemical-vapor deposition as well as on the humidity of the air. It is proposed that the dissociation of the dimer structure in the air is suppressed by hydrogen adsorption and coincides with the oxidation of H-terminated or dangling bonds due to H2O adsorption.

引用

页码：3701 / 3703

页数：3

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