AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS

被引：25

作者：

HALL, R

LECK, JH

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 25卷 / 06期

关键词：

D O I：

10.1080/00207216808938119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：529 / &

共 11 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] ELECTRON-HOLE GENERATION IN GAAS [J].

CONWELL, EM .

APPLIED PHYSICS LETTERS, 1966, 9 (10) :383-+

[3] EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS [J].

KRESSEL, H ;

KUPSKY, G .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) :535-&

[4] BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS [J].

KRESSEL, H ;

BLICHER, A .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2495-&

[5]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[6] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J].

LOGAN, RA ;

CHYNOWETH, AG ;

COHEN, BG .

PHYSICAL REVIEW, 1962, 128 (06) :2518-&

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157

[8] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

[9] THE VOLTAGE BREAKDOWN OF GAAS ABRUPT JUNCTIONS [J].

WEINSTEIN, M ;

MLAVSKY, AI .

APPLIED PHYSICS LETTERS, 1963, 2 (05) :97-99

[10]

WILLIAMS R, 1966, RCA REV, V27, P336

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