DETERMINATION OF MINORITY-CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY WITH HIGH SPACIAL RESOLUTION

被引：61

作者：

WATANABE, M ^{[1
]}

ACTOR, G ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期

关键词：

D O I：

10.1109/T-ED.1977.18901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1172 / 1177

页数：6

共 19 条

[1] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].

BERZ, F ;

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445

[2]

BRICE DK, 1975, I PHYS C 23, P126

[3] RESPONSE OF SI AND GAP P-N JUNCTIONS TO A 5- TO 40-KEV ELECTRON BEAM [J].

CZAJA, W .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4236-&

[4] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

HACKETT, WH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&

[5] SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES [J].

HACKETT, WH ;

SAUL, RH ;

KAMMLOTT, GW ;

DIXON, RW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2857-+

[6] SCANNING ELECTRON-MICROSCOPE STUDIES OF ELECTROLUMINESCENT DIODES OF GAAS AND GAP .2. ANALYSIS OF GAAS LINE SCAN TRACES [J].

HOLT, DB ;

CHASE, BD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01) :135-144

[7] SCANNING ELECTRON-MICROSCOPE STUDIES OF ELECTROLUMINESCENT DIODES OF GAAS AND GAP .3. QUANTITATIVE LINE SCAN OBSERVATIONS ON GAP [J].

HOLT, DB ;

CHASE, BD ;

CENSLIVE, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (02) :459-467

[8] OBSERVATION OF DISLOCATIONS IN A SILICON PHOTOTRANSISTOR BY SCANNING ELECTRON-MICROSCOPY USING BARRIER ELECTRON VOLTAIC EFFECT [J].

HOLT, DB ;

OGDEN, R .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :37-&

[9] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539

[10] INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES [J].

KOCK, AJRD ;

FERRIS, SD ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :313-315

← 1 2 →