REDUCTION OF FAST SURFACE-STATES ON P-TYPE GAAS

被引:6
作者
AHRENKIEL, RK [1 ]
WAGNER, RS [1 ]
PATTILLO, S [1 ]
DUNLAVY, D [1 ]
JERVIS, T [1 ]
KAZMERSKI, LL [1 ]
IRELAND, PJ [1 ]
机构
[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545
关键词
D O I
10.1063/1.93240
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:700 / 703
页数:4
相关论文
共 12 条
[1]   NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN SI OR GAAS AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB ;
CHANG, RPH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1374-1378
[2]   APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J].
CHANG, RPH ;
COLEMAN, JJ ;
POLAK, AJ ;
FELDMAN, LC ;
CHANG, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (03) :237-238
[3]   NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES [J].
CHANG, RPH ;
COLEMAN, JJ .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :332-333
[4]   DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].
FARROW, RL ;
CHANG, RK ;
MROCZKOWSKI, S ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770
[5]   NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].
HASEGAWA, H ;
FORWARD, KE ;
HARTNAGEL, HL .
APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569
[6]   LOCAL ATOMIC ORDER IN NATIVE III-V OXIDES [J].
LUCOVSKY, G ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :946-951
[7]  
LUCOVSKY G, COMMUNICATION
[8]   ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].
MEINERS, LG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407
[9]   THERMAL OXIDATION OF GAAS [J].
MURARKA, SP .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181
[10]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+