ION-IMPLANTATION-INDUCED DAMAGE AND RESONANT LEVELS IN PB1-XSNXTE

被引：32
|
作者：
GRESSLEHNER, KH
PALMETSHOFER, L
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期
关键词：
D O I：
10.1063/1.328283
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4735 / 4738
页数：4
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