GAAS MICROWAVE MOSFETS

[11] Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579

[12] MIMURA T, 1977, 9TH C SOL STAT DEV T

[13] SUBMICRON GAAS EPITAXIAL LAYER FROM DIETHYLGALLIUMCHLORIDE AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1227 - 1231

[14] REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151

[15] MICROWAVE PROPERTIES OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 125 - +

[16] YOKOYAMA N, UNPUBLISHED

[11] Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579

[12] MIMURA T, 1977, 9TH C SOL STAT DEV T

[13] SUBMICRON GAAS EPITAXIAL LAYER FROM DIETHYLGALLIUMCHLORIDE AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1227 - 1231

[14] REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151

[15] MICROWAVE PROPERTIES OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 125 - +

[16] YOKOYAMA N, UNPUBLISHED