CRITIQUE OF THEORY OF P-N-P-N DEVICES

[1] FULOP W, 1963, IEEE T, VED10, P120

[2] GENTRY FE, 1964, IEEE T ELECTRON DEVI, VED11, P74

[3] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH4

[4] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH5

[5] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1229 - 1235

[6] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[7] MOLL, 1956, P IRE, V44, P1174

[8] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[1] FULOP W, 1963, IEEE T, VED10, P120

[2] GENTRY FE, 1964, IEEE T ELECTRON DEVI, VED11, P74

[3] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH4

[4] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH5

[5] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1229 - 1235

[6] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[7] MOLL, 1956, P IRE, V44, P1174

[8] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243