BALLISTIC ELECTRON-TRANSPORT IN THIN-LAYERS OF GAAS

被引:0
作者
EASTMAN, L [1 ]
STALL, R [1 ]
WOODARD, D [1 ]
WOOD, C [1 ]
DANDEKAR, N [1 ]
SHUR, M [1 ]
BOARD, K [1 ]
机构
[1] CORNELL UNIV,ITHACA,NY 14853
关键词
D O I
10.1109/T-ED.1980.20232
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2197 / 2197
页数:1
相关论文
共 2 条
[1]   BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].
SHUR, MS ;
EASTMAN, LF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683
[2]  
SHUR MS, UNPUBLISHED