SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON

被引：76

作者：

IRENE, EA

TIERNEY, E

DONG, DW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

关键词：

D O I：

10.1149/1.2129737

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：705 / 713

页数：9

共 17 条

[1]

ABBAS SA, 1975, 13TH ANN P REL PHYS

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[3] MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS [J].

ANDERSON, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1540-1546

[4]

DIMARIA DJ, 1975, APPL PHYS LETT, V27, P507

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&

[6] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[7] DIFFUSIONAL VISCOSITY OF A POLYCRYSTALLINE SOLID [J].

HERRING, C .

JOURNAL OF APPLIED PHYSICS, 1950, 21 (05) :437-445

[8]

IRENE E, 1979, 12TH ANN INT MET SOC

[9] SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED FILMS OF A1XOYNZ ON SILICON [J].

IRENE, EA ;

SILVESTRI, VJ ;

WOOLHOUSE, GR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :409-427

[10] RESIDUAL-STRESS IN SILICON-NITRIDE FILMS [J].

IRENE, EA .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :287-298

← 1 2 →