FERMI LEVEL SHIFT WITH PHOTOVOLTAGES AT ZINC MODIFIED CDSE SURFACES

被引:8
作者
MANDAL, KC [1 ]
机构
[1] TATA INST FUNDAMENTAL RES,CHEM PHYS GRP,BOMBAY 400005,INDIA
关键词
D O I
10.1007/BF00721892
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:1203 / 1204
页数:2
相关论文
共 14 条
[1]   RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].
ASPNES, DE .
SURFACE SCIENCE, 1983, 132 (1-3) :406-421
[2]   EVIDENCE FOR AMPHOTERIC BEHAVIOR OF RU ON CDTE SURFACES [J].
BOSE, DN ;
BASU, S ;
MANDAL, KC ;
MAZUMDAR, D .
APPLIED PHYSICS LETTERS, 1986, 48 (07) :472-474
[3]  
BOSE DN, IN PRESS SEMICOND SC
[4]   STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES [J].
ELLIS, AB ;
KAISER, SW ;
BOLTS, JM ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (09) :2839-2848
[5]   EFFICIENT SOLAR TO CHEMICAL CONVERSION - 12-PERCENT EFFICIENT PHOTOASSISTED ELECTROLYSIS IN THE [P-TYPE INP(RU)] - HCL-KCL-PT(RH) CELL [J].
HELLER, A ;
VADIMSKY, RG .
PHYSICAL REVIEW LETTERS, 1981, 46 (17) :1153-1156
[7]  
KAINTHLA RC, 1983, P BIENN C INT SOL EN, V3, P1748
[8]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[9]   SURFACE-MODIFIED CDTE PEC SOLAR-CELLS [J].
MANDAL, KC ;
BASU, S ;
BOSE, DN .
SOLAR CELLS, 1986, 18 (01) :25-30
[10]   EFFECTS OF SURFACE MODIFICATION ON N-CDTE PHOTOELECTROCHEMICAL SOLAR-CELLS [J].
MANDAL, KC ;
BASU, S ;
BOSE, DN .
JOURNAL OF PHYSICAL CHEMISTRY, 1987, 91 (15) :4011-4013