BISTABLE STATE OF MICROPLASMAS IN GERMANIUM P-N-JUNCTIONS

被引:0
|
作者
SHAPOVAL.VP
PALEI, VM
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 6卷 / 02期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:333 / &
相关论文
共 50 条
  • [1] INFLUENCE OF TRAPPING LEVELS ON BISTABLE STATE OF MICROPLASMAS IN GERMANIUM P-N-JUNCTIONS
    PALEI, VM
    VIKULIN, IM
    SAVCHENKO, NM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1174 - 1177
  • [2] INFLUENCE OF TRAPPING LEVELS ON THE BISTABLE STATE OF MICROPLASMAS IN GERMANIUM p-n JUNCTIONS.
    Palei, V.M.
    Vikulin, I.M.
    Savchenko, N.M.
    1973, 6 (07): : 1174 - 1177
  • [3] TEMPERATURE DEPENDENCES OF CHARACTERISTICS OF MICROPLASMAS IN P-N-JUNCTIONS
    ISAEV, MR
    MUTALIBOV, SR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 576 - 578
  • [4] GERMANIUM PHOTODETECTORS WITH INDUCED P-N-JUNCTIONS
    HSIEH, YP
    CARD, HC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1414 - 1420
  • [5] CHARACTERISTICS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N-JUNCTIONS
    KUZMIN, VA
    KRYUKOVA, NN
    KYUREGYAN, AS
    SOROKIN, YG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 766 - 769
  • [6] FORMATION OF SECONDARY BREAKDOWN IN GERMANIUM P-N-JUNCTIONS
    SHAPOVALOV, VP
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (10): : 1795 - +
  • [7] RELAXATION OF PHOTOINJECTED CARRIERS IN GERMANIUM P-N-JUNCTIONS
    MARMUR, IY
    OKSMAN, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 322 - 323
  • [8] ELECTRET STATE OF P-N-JUNCTIONS WITH DISLOCATIONS
    YAKIMOV, EB
    YARYKIN, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1078 - 1079
  • [9] Oscillatory structure in radiation spectra of individual microplasmas in silicon carbide p-n-junctions
    Genkin, AM
    Genkina, VK
    Germash, LP
    Zubkova, SM
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2006, 33 (03): : 161 - 167
  • [10] IMPURITY PHOTO-ELECTRIC EFFECT IN GERMANIUM P-N-JUNCTIONS
    KURBATOV, VA
    PENIN, NA
    SOLOVEV, NN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1102 - 1104