BORON NEUTRALIZATION AND HYDROGEN DIFFUSION IN SILICON SUBJECTED TO LOW-ENERGY HYDROGEN IMPLANTATION

被引：43

作者：

ZUNDEL, T ^{[1
]}

MESLI, A ^{[1
]}

MULLER, JC ^{[1
]}

SIFFERT, P ^{[1
]}

机构：

[1] CTR RECH NUCL,CNRS,UA 292,PHYS & APPLICAT SEMICOND LAB,F-67037 STRASBOURG,FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期

关键词：

D O I：

10.1007/BF00617761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：31 / 40

页数：10

共 47 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY [J].

ASSALI, LVC ;

LEITE, JR .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :403-403

[2] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].

ASSALI, LVC ;

LEITE, JR .

PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982

[3] BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON [J].

BARANOWSKI, JM ;

TATARKIEWICZ, J .

PHYSICAL REVIEW B, 1987, 35 (14) :7450-7453

[4] ELECTRICAL-PROPERTIES OF HYDROGEN BOMBARDED SILICON SURFACES [J].

BARHDADI, A ;

PONPON, JP ;

GROB, A ;

GROB, JJ ;

MESLI, A ;

MULLER, JC ;

SIFFERT, P .

VACUUM, 1986, 36 (10) :705-709

[5] HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN C-SI - AN ABINITIO APPROACH [J].

BONAPASTA, AA ;

LAPICCIRELLA, A ;

TOMASSINI, N ;

CAPIZZI, M .

PHYSICAL REVIEW B, 1987, 36 (11) :6228-6230

[6] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].

CAPIZZI, M ;

MITTIGA, A .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920

[7]

CAPIZZI M, 1987, 18TH P INT C DEF SEM, V2, P995

[8]

CHARI A, 1986, 7TH P E C PHOT SOL E, P860

[9]

CHEVALLIER J, 1988, IN PRESS ANN REV MAT

[10] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J].

DELEO, GG ;

FOWLER, WB .

PHYSICAL REVIEW B, 1985, 31 (10) :6861-6864

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