SCALING BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：28

作者：

LEVI, AFJ

机构：

[1] AT&T Bell Lab, United States

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 20期

关键词：

D O I：

10.1049/el:19880867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1273 / 1275

页数：3

共 7 条

[1] EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BERTHOLD, K ;

LEVI, AFJ ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2247-2249

[2] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].

GOMYO, A ;

SUZUKI, T ;

IIJIMA, S .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648

[3] ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS [J].

LEVI, AFJ ;

SPAH, RJ ;

ENGLISH, JH .

PHYSICAL REVIEW B, 1987, 36 (17) :9402-9405

[4] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[5]

MADELUNG O, 1982, LANDOLT BORNSTEIN TA, V3

[6]

NOTTENBURG RN, 1988, IN PRESS ELECTRON DE

[7] REALIZATION OF THE ESAKI-TSU-TYPE DOPING SUPERLATTICE [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT .

PHYSICAL REVIEW B, 1987, 36 (02) :1348-1351

← 1 →